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| ON Semiconductort NPN Darlington Complementary Silicon Power Transistors . . . designed for general-purpose amplifier and low-frequency switching applications. 2N6283 2N6284 PNP * High DC Current Gain @ IC = 10 Adc - * * w 2N6286 2N6287 DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS 160 WATTS hFE = 2400 (Typ) - 2N6284 = 4000 (Typ) - 2N6287 Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) Monolithic Construction with Built-In Base-Emitter Shunt Resistors These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative. Symbo l VCEO VCB VEB IC IB PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I I I III I I I I I I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I I I III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III I II I IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II III I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIII I I I II II II I IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I II Rating *MAXIMUM RATINGS 2N6283 2N6286 80 80 2N6284 2N6287 100 100 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 20 40 Collector Current - Continuous Peak Base Current 0.5 CASE 1-07 TO-204AA (TO-3) Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 160 0.915 Watts W/_C _C TJ,Tstg -65 to + 200 *THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Unit Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. 1.09 _C/W 160 140 120 100 80 60 40 20 0 0 25 75 150 50 100 125 TC, CASE TEMPERATURE (C) 1 175 200 Figure 1. Power Derating (c) Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 2 Publication Order Number: 2N6284/D IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIII III I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIII I II II I I IIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Small-Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. (1) Pulse test: Pulse Width = 300 s, Duty Cycle = 2% *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) Base-Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) (IC = 20 Adc, IB = 200 mAdc) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) (IC = 20 Adc, VCE = 3.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) Characteristic 2N6283 2N6284 2N6286 2N6287 http://onsemi.com 2N6283, 2N6284 2N6286, 2N6287 2N6283, 2N6286 2N6284, 2N6287 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICEO IEBO ICEX |hfe| Cob hFE hfe Min 300 750 100 100 4.0 2 80 - - - - - - - - - - - 18,000 - Max 400 600 4.0 2.8 2.0 3.0 2.0 0.5 5.0 1.0 1.0 - - - - mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc pF - - 2N6283 2N6284 2N6286 2N6287 VCC - 30 V RC TUT 10 7.0 5.0 3.0 t, TIME ( s) SCOPE 2.0 tf 1.0 0.7 0.5 0.3 VCC = 30 Vdc I /I = 250 0.2 C B IB1 = IB2 td @ VBE(off) = 0 V T = 25C 0.1 J 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) tr ts 2N6284 (NPN) 2N6287 (PNP) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE e.g., 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA V2 APPROX RB 51 D1 [ 8.0 k [ 50 + 8.0 V 0 V1 APPROX - 12 V 25 s tr, tf v 10 ns DUTY CYCLE = 1.0% + 4.0 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES 20 Figure 2. Switching Times Test Circuit Figure 3. Switching Times r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RJC(t) = r(t) RJC RJC = 1.09C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 0.01 0.01 0.02 0.03 0.05 0.1 Figure 4. Thermal Response http://onsemi.com 3 2N6283 2N6284 2N6286 2N6287 ACTIVE-REGION SAFE OPERATING AREA 50 0.1 ms IC, COLLECTOR CURRENT (AMP) 20 10 5.0 5.0 ms 2.0 1.0 0.5 0.2 0.1 0.05 2.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C SINGLE PULSE 0.5 ms 1.0 ms dc TJ = 200C 5.0 10 20 50 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. 2N6284, 2N6287 10,000 hFE, SMALL-SIGNAL CURRENT GAIN 5000 2000 1000 500 200 100 50 20 10 1.0 2.0 2N6284 (NPN) 2N6287 (PNP) 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TJ = 25C VCE = 3.0 Vdc IC = 10 A 1000 TJ = 25C 700 C, CAPACITANCE (PF) 500 Cib Cob 2N6284 (NPN) 2N6287 (PNP) 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 300 200 Figure 6. Small-Signal Current Gain Figure 7. Capacitance http://onsemi.com 4 2N6283 2N6284 2N6286 2N6287 NPN 2N6284 20,000 VCE = 3.0 V 10,000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 TJ = 150C 10,000 7000 5000 25C 3000 2000 1000 700 500 300 0.2 0.3 -55 C 30,000 20,000 PNP 2N6287 VCE = 3.0 V TJ = 150C 25C -55 C 0.2 0.3 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 5.0 A 10 A 15 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 5.0 A 2.2 10 A 15 A 2.2 1.8 1.8 1.4 1.4 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 Figure 9. Collector Saturation Region 3.0 TJ = 25C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 3.0 TJ = 25C 2.5 2.0 VBE(sat) @ IC/IB = 250 2.0 1.5 1.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 1.0 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 1.0 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages http://onsemi.com 5 2N6283 2N6284 2N6286 2N6287 NPN 2N6284 V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENTS (mV/C) +5.0 +4.0 +3.0 +2.0 +1.0 0 -1.0 -2.0 -3.0 -4.0 -5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 25C to + 150C VB for VBE -55 C to + 25C 5.0 7.0 10 20 *VC for VCE(sat) -55 C to + 25C *APPLIES FOR IC/IB hFE @ VCE + 3.0 V 250 25C to 150C +5.0 +4.0 +3.0 +2.0 +1.0 0 -1.0 -2.0 -3.0 -4.0 -5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 25C to + 150C VB for VBE -55 C to + 25C 5.0 7.0 10 20 *VC for VCE(sat) *APPLIES FOR IC/IB hFE @ VCE + 3.0 V 250 25C to 150C -55 C to + 25C PNP 2N6287 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 TJ = 150C 102 100C 101 REVERSE 100 25C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 FORWARD VCE = 30 V 103 102 101 100 10-1 REVERSE 10-2 10-3 +0.6 +0.4 25C FORWARD 100C VCE = 30 V TJ = 150C +0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region NPN 2N6284 COLLECTOR PNP 2N6287 COLLECTOR BASE BASE [ 8.0 k [ 60 [ 8.0 k [ 60 EMITTER EMITTER Figure 13. Darlington Schematic http://onsemi.com 6 2N6283 2N6284 2N6286 2N6287 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C E D U 2 2 PL -T- K M SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) V H L G 1 TQ M Y M -Y- B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 2N6284/D |
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